copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 1 /5 samwin features high ruggedness r ds( on ) (max 1.5 ? )@v gs =10v gate charge (typical 30 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin. this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. it is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. n - channel mosfet absolute maximum ratings symbol parameter value unit to - 220 to - 220f v dss drain to source voltage 500 v i d continuous drain current (@t c =25 o c) 5.5 5.5* a continuous drain current (@t c =100 o c) 3.8 3.8* a i dm drain current pulsed (note 1) 22 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 240 mj e ar repetitive avalanche energy (note 1) 16 mj dv/dt peak diode recovery dv/dt (note 3) 3 v/ns p d total power dissipation (@t c =25 o c) 135 39* w derating factor above 25 o c 1.08 0.31 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit to - 220 to - 220f r thjc thermal resistance, junction to case 0.92 3.16 o c/w r thcs thermal resistance, case to sink 0.5 - o c/w r thja thermal resistance, junction to ambient 65 o c /w *. drain current is limited by junction temperature. bv dss : 500v i d : 5.5a r ds(on) : 1.5ohm 1 2 3 1. gate 2. drain 3. source to - 220f 1 2 3 1 2 3 to - 220 SW830 item sales type marking package packaging 1 sw p 830 SW830 to - 220 tube 2 sw f 830 SW830 to - 220f tube order codes
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 2 /5 samwin electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 500 - - v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c - 0.48 - v/ o c i dss drain to source leakage current v ds =500v, v gs =0v - - 1 ua v ds =400v, t c =125 o c - - 10 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v - - 100 na gate to source leakage current, reverse v gs = - 30v, v ds =0v - - - 100 na on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.0 - 4.0 v r ds(on) drain to source on state resistance v gs =10v, i d = 2.75a - 1.4 1.5 ? g fs forward transconductance vds = 40 v, id = 2.75 a 3 - - s dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz - - 1100 pf c oss output capacitance - - 115 c rss reverse transfer capacitance - - 32 t d(on) turn on delay time v ds =250v, i d =5.5a, r g =25 ? (note 4,5) - 12 40 ns tr rising time - 33 80 t d(off) turn off delay time - 97 200 t f fall time - 48 80 q g total gate charge v ds =400v, v gs =10v, i d =5.5a (note 4,5) - 30 50 nc q gs gate - source charge - 4 - q gd gate - drain charge - 14 - source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet - - 5.5 a i sm pulsed source current - - 22 a v sd diode forward voltage drop. i s =5.5a, v gs =0v - - 1.5 v t rr reverse recovery time i s =5.5a, v gs =0v, di f /dt=100a/us - 370 - ns q rr breakdown voltage charge - 2.8 - uc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 15.8mh, i as = 5.5a, v dd = 50v, r g =25 ?, starting t j = 25 o c 3. i sd 5.5a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. SW830
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 3 /5 samwin fig. 1. on - state characteristics fig. 2. on - resistance variation vs. drain current and gate voltage fig. 3. gate charge characteristics SW830 0.0 2.0 4.0 6.0 8.0 10.0 12.0 0.0 10.0 20.0 30.0 40.0 vgs, gate source voltage(v) qg, total gate charge (nc) vds=400v notes: 1. 250s pulse test 2. t=25 3. vgs 2~10v step=1v vgs=20v vgs=10v fig. 4. on state current vs. diode forward voltage fig 5. breakdown voltage variation vs. junction temperature fig. 6. on resistance variation vs. junction temperature 150 25 0 0.5 1 1.5 2 2.5 -70 -45 -20 5 30 55 80 105 130 155 180 rdson, (normalized drain - source on resistance tj junction temperture 0.8 0.9 1 1.1 1.2 -70 -45 -20 5 30 55 80 105 130 155 180 bvdss, (normalized drain - source breakdown voltage tj junction temperture
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 4 /5 samwin SW830 fig. 7. maximum safe operating area fig. 8. transient thermal response curve v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 9. gate charge test circuit & waveform fig. 10. switching time test circuit & waveform v ds same type as dut dut v gs 1.5ma q g q gs q gd v gs charge nc 10v
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 5 /5 samwin fig. 11. unclamped inductive switching test circuit & waveform SW830 fig. 12. peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd
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